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NJVMJD112G
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onsemi NJVMJD112G

Manufacturer No:
NJVMJD112G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NJVMJD112G Datasheet
ECAD Model:
-
Description:
TRANS NPN DARL 100V 2A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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In Stock

$0.42
1,224

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