onsemi-NJVBDX53C - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 12mA, 3A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 3A, 3V
Power - Max:	65 W
Frequency - Transition:	-
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

onsemi NJVBDX53C