NIF9N05CLT3G
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onsemi NIF9N05CLT3G

Manufacturer No:
NIF9N05CLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NIF9N05CLT3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 59V 2.6A SOT223
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):59 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3V, 10V
Rds On (Max) @ Id, Vgs:125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 35 V
FET Feature:- 
Power Dissipation (Max):1.69W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number NIF9N05CLT3G NIF9N05CLT1G   NIF9N05CLT3  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 59 V 59 V 52 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 2.6A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V 3V, 10V 3V, 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V 125mOhm @ 2.6A, 10V 125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA 2.5V @ 100µA 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 4.5 V 7 nC @ 4.5 V 7 nC @ 4.5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 35 V 250 pF @ 35 V 250 pF @ 35 V
FET Feature - - -
Power Dissipation (Max) 1.69W (Ta) 1.69W (Ta) 1.69W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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