NGTB30N60FLWG
  • Share:

onsemi NGTB30N60FLWG

Manufacturer No:
NGTB30N60FLWG
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NGTB30N60FLWG Datasheet
ECAD Model:
-
Description:
IGBT 600V 60A 250W TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 30A
Power - Max:250 W
Switching Energy:700µJ (on), 280µJ (off)
Input Type:Standard
Gate Charge:170 nC
Td (on/off) @ 25°C:83ns/170ns
Test Condition:400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):72 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
0 Remaining View Similar

In Stock

-
83

Please send RFQ , we will respond immediately.

Similar Products

Part Number NGTB30N60FLWG NGTB30N60FWG   NGTB40N60FLWG   NGTG30N60FLWG   NGTB50N60FLWG  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type Trench Field Stop Trench Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 60 A 60 A 80 A 60 A 100 A
Current - Collector Pulsed (Icm) 120 A 120 A 160 A 120 A 200 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 1.7V @ 15V, 30A 2.1V @ 15V, 40A 1.9V @ 15V, 30A 1.9V @ 15V, 50A
Power - Max 250 W 167 W 257 W 250 W 223 W
Switching Energy 700µJ (on), 280µJ (off) 650µJ (on), 650µJ (off) 890µJ (on), 440µJ (off) 700µJ (on), 280µJ (off) 1.1mJ (on), 600µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 170 nC 170 nC 171 nC 170 nC 310 nC
Td (on/off) @ 25°C 83ns/170ns 81ns/190ns 85ns/174ns 83ns/170ns 116ns/292ns
Test Condition 400V, 30A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V 400V, 40A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 72 ns 72 ns 77 ns - 85 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247-3 TO-247 TO-247-3 TO-247-3

Related Product By Categories

IXGH28N60B3D1
IXGH28N60B3D1
IXYS
IGBT 600V 66A 190W TO247AD
IRG4BC40U
IRG4BC40U
Infineon Technologies
IGBT 600V 40A 160W TO220AB
APT30GT60BRG
APT30GT60BRG
Microchip Technology
IGBT 600V 64A 250W TO247
IXGH20N120BD1
IXGH20N120BD1
IXYS
IGBT 1200V 40A 190W TO247
IXSH15N120B
IXSH15N120B
IXYS
IGBT 1200V 30A 150W TO247
IRGB4062DPBF
IRGB4062DPBF
Infineon Technologies
IGBT TRENCH 600V 48A TO220AB
IXGP12N100A
IXGP12N100A
IXYS
IGBT 1000V 24A 100W TO220AB
IKW50N65H5AXKSA1
IKW50N65H5AXKSA1
Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
NGTB45N60S2WG
NGTB45N60S2WG
onsemi
IGBT 45A 600V TO-247
SIGC121T60NR2CX1SA2
SIGC121T60NR2CX1SA2
Infineon Technologies
IGBT 3 CHIP 600V WAFER
SIGC25T60SNCX1SA2
SIGC25T60SNCX1SA2
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGTVX2TS65DGC11
RGTVX2TS65DGC11
Rohm Semiconductor
650V 60A FIELD STOP TRENCH IGBT

Related Product By Brand

P6SMB13AT3G
P6SMB13AT3G
onsemi
TVS DIODE 11.1VWM 18.2VC SMB
MV2109G
MV2109G
onsemi
DIODE TUNING 30V 200MA TO92-2
1N976B_T50R
1N976B_T50R
onsemi
DIODE ZENER 43V 500MW DO35
MMBZ5248BLT3
MMBZ5248BLT3
onsemi
DIODE ZENER 18V 225MW SOT23-3
MMUN2216LT1
MMUN2216LT1
onsemi
TRANS BRT NPN 100MA 50V SOT23
IRLW610ATM
IRLW610ATM
onsemi
MOSFET N-CH 200V 3.3A I2PAK
NTTFS4C55NTWG
NTTFS4C55NTWG
onsemi
MOSFET N-CH 30V 75A 8WDFN
CM1409-08DE
CM1409-08DE
onsemi
FILTER RC(PI) 100 OHM/15PF SMD
MC74HC365ADTG
MC74HC365ADTG
onsemi
IC BUFFER NON-INVERT 6V 16TSSOP
NLVVHC1G04DFT1
NLVVHC1G04DFT1
onsemi
IC INVERTER 1CH 1-INP SC88A
MC100EP16VBDT
MC100EP16VBDT
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCV47822PAAJR2G
NCV47822PAAJR2G
onsemi
IC PWR SWTCH BIPOLAR 1:1 14TSSOP