NGTB30N120IHLWG
  • Share:

onsemi NGTB30N120IHLWG

Manufacturer No:
NGTB30N120IHLWG
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NGTB30N120IHLWG Datasheet
ECAD Model:
-
Description:
IGBT 1200V 30A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):320 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 30A
Power - Max:260 W
Switching Energy:1mJ (off)
Input Type:Standard
Gate Charge:420 nC
Td (on/off) @ 25°C:-/360ns
Test Condition:600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

-
587

Please send RFQ , we will respond immediately.

Similar Products

Part Number NGTB30N120IHLWG NGTB30N120IHRWG   NGTB30N120IHSWG   NGTB40N120IHLWG   NGTB20N120IHLWG  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 60 A 60 A 60 A 80 A 40 A
Current - Collector Pulsed (Icm) 320 A 120 A 200 A 320 A 200 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A 2.5V @ 15V, 30A 2.4V @ 15V, 30A 2.35V @ 15V, 40A 2.2V @ 15V, 20A
Power - Max 260 W 384 W 192 W 260 W 192 W
Switching Energy 1mJ (off) 700µJ (off) 1mJ (off) 1.4mJ (off) 700µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 420 nC 225 nC 220 nC 420 nC 200 nC
Td (on/off) @ 25°C -/360ns -/230ns -/210ns -/360ns -/235ns
Test Condition 600V, 30A, 10Ohm, 15V 600V, 30A, 10Ohm, 15V 600V, 30A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

IXBH20N300
IXBH20N300
IXYS
IGBT 3000V 50A 250W TO247
GT30N135SRA,S1E
GT30N135SRA,S1E
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
STGFW35HF60W
STGFW35HF60W
STMicroelectronics
IGBT 600V 36A 88W TO3PF
STGB19NC60HDT4
STGB19NC60HDT4
STMicroelectronics
IGBT 600V 40A 130W D2PAK
IHW30N160R5XKSA1
IHW30N160R5XKSA1
Infineon Technologies
HOME APPLIANCES 14
IXA55I1200HJ
IXA55I1200HJ
IXYS
IGBT 1200V 84A 290W TO247
IXYK110N120B4
IXYK110N120B4
IXYS
IGBT 1200V 110A GEN4 XPT TO264
NGP15N41CL
NGP15N41CL
onsemi
IGBT 440V 15A 107W TO220AB
STGB7NB60KDT4
STGB7NB60KDT4
STMicroelectronics
IGBT 600V 14A 80W D2PAK
IXGX40N60BD1
IXGX40N60BD1
IXYS
IGBT 600V 75A 250W PLUS247
SGP02N60XKSA1
SGP02N60XKSA1
Infineon Technologies
IGBT 600V 6A 30W TO220-3
RJH60D7DPM-00#T1
RJH60D7DPM-00#T1
Renesas Electronics America Inc
IGBT 600V 90A 55W TO3PFM

Related Product By Brand

SMF05T1
SMF05T1
onsemi
TVS DIODE 5VWM 12.5VC SC88A
GBU6D
GBU6D
onsemi
BRIDGE RECT 1PHASE 200V 6A GBU
BZX55C3V0_T50R
BZX55C3V0_T50R
onsemi
DIODE ZENER 3V 500MW DO35
MCR22-2RL1
MCR22-2RL1
onsemi
SCR 50V 1.5A TO92-3
2N4401TF
2N4401TF
onsemi
TRANS NPN 40V 0.6A TO92-3
NTMFS4921NT3G
NTMFS4921NT3G
onsemi
MOSFET N-CH 30V 8.8A/58.5A 5DFN
SCH1331-P-TL-H
SCH1331-P-TL-H
onsemi
MOSFET P-CH 12V 3A SCH6
MC74AC161N
MC74AC161N
onsemi
IC COUNTER SYNC BINARY 16-DIP
NLVVHC1G32DFT2G
NLVVHC1G32DFT2G
onsemi
IC GATE OR 1CH 2-INP SC88A
CAT1024YI-30-GT3
CAT1024YI-30-GT3
onsemi
IC SUPERVISOR 1 CHANNEL 8TSSOP
NCP302LSN09T1G
NCP302LSN09T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MCT2202300W
MCT2202300W
onsemi
OPTOISO 5.3KV TRANS W/BASE 6DIP