onsemi-NGTB15N60EG - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 15A
Power - Max:	117 W
Switching Energy:	900µJ (on), 300µJ (off)
Input Type:	Standard
Gate Charge:	80 nC
Td (on/off) @ 25°C:	78ns/130ns
Test Condition:	400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr):	270 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

onsemi NGTB15N60EG