onsemi-NGTB10N60R2DT4G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	40 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 10A
Power - Max:	72 W
Switching Energy:	412µJ (on), 140µJ (off)
Input Type:	Standard
Gate Charge:	53 nC
Td (on/off) @ 25°C:	48ns/120ns
Test Condition:	300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr):	90 ns
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NGTB10N60R2DT4G