onsemi-NGB8207ABNT4G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	365 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	50 A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 3.7V, 10A
Power - Max:	165 W
Switching Energy:	-
Input Type:	Logic
Gate Charge:	-
Td (on/off) @ 25°C:	-
Test Condition:	-
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK

onsemi NGB8207ABNT4G