NDT453N
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onsemi NDT453N

Manufacturer No:
NDT453N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NDT453N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8A SOT-223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:28mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number NDT453N NDT455N   NDT451N  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 11.5A (Ta) 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 28mOhm @ 8A, 10V 15mOhm @ 11.5A, 10V 50mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 61 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V 20V -
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 15 V 1220 pF @ 15 V 730 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta) 3W (Ta) -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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