NDT451N
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onsemi NDT451N

Manufacturer No:
NDT451N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NDT451N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 5.5A SOT-223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:50mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number NDT451N NDT453N   NDT455N   NDT451AN  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) 8A (Ta) 11.5A (Ta) 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 5.5A, 10V 28mOhm @ 8A, 10V 15mOhm @ 11.5A, 10V 35mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 35 nC @ 10 V 61 nC @ 10 V 30 nC @ 10 V
Vgs (Max) - ±20V 20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 10 V 890 pF @ 15 V 1220 pF @ 15 V 720 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) - 3W (Ta) 3W (Ta) 3W (Ta)
Operating Temperature - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4 SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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