NDT3055
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onsemi NDT3055

Manufacturer No:
NDT3055
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NDT3055 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 4A SOT-223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number NDT3055 NDT3055L  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 4A, 10V 100mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 30 V 345 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta) 3W (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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