NDS9407
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onsemi NDS9407

Manufacturer No:
NDS9407
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NDS9407 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 3A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:150mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:732 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NDS9407 NDS9400   NDS9405  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2.5A 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 3A, 10V - 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V - 40 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 732 pF @ 30 V - 1425 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2W 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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