NDS351AN
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onsemi NDS351AN

Manufacturer No:
NDS351AN
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NDS351AN Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.4A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:145 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NDS351AN NDS355AN   NDS351N  
Manufacturer onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 1.7A (Ta) 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 10V 85mOhm @ 1.9A, 10V 160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 4.5 V 5 nC @ 5 V 3.5 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 145 pF @ 15 V 195 pF @ 15 V 140 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SuperSOT-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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