onsemi-NDFPD1N150CG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1500 V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	150Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	4.2 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	80 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 20W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3 Full Pack

onsemi NDFPD1N150CG