NDF10N60ZG
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onsemi NDF10N60ZG

Manufacturer No:
NDF10N60ZG
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NDF10N60ZG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO220FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1645 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number NDF10N60ZG NDF10N62ZG   NDF10N60ZH  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 620 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V 750mOhm @ 5A, 10V 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 47 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1645 pF @ 25 V 1425 pF @ 25 V 1645 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 39W (Tc) 36W (Tc) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220-2 Full Pack
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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