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| Part Number | NDC652P | NDC632P |
|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V | 140mOhm @ 2.7A, 4.5V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 15 nC @ 4.5 V |
| Vgs (Max) | -20V | -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 15 V | 550 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.6W (Ta) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | SuperSOT™-6 | SuperSOT™-6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
