onsemi-NDBA170N06AT4H - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	170A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	280 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	15800 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	90W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

onsemi NDBA170N06AT4H