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| Part Number | MUR860H | MUR860J | MUR8L60H | MUR460H | MUR820H | MUR840H | MUR860 | MUR860G |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | onsemi | WeEn Semiconductors | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | onsemi | onsemi | Harris Corporation | onsemi |
| Product Status | Obsolete | Active | Active | Active | Obsolete | Obsolete | Obsolete | Active |
| Diode Type | Standard | Standard | Standard | Standard | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 600 V | 600 V | 200 V | 400 V | 600 V | 600 V |
| Current - Average Rectified (Io) | 8A | 8A | 8A (DC) | 4A | 8A | 8A | 8A | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A | 1.25 V @ 8 A | 1.3 V @ 8 A | 1.28 V @ 4 A | 975 mV @ 8 A | 1.3 V @ 8 A | 1.5 V @ 8 A | 1.5 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns | 90 ns | 65 ns | 50 ns | 35 ns | 60 ns | 60 ns | 60 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 600 V | 5 µA @ 600 V | 10 µA @ 600 V | 5 µA @ 200 V | 10 µA @ 400 V | 10 µA @ 600 V | 10 µA @ 600 V |
| Capacitance @ Vr, F | - | - | - | 65pF @ 4V, 1MHz | - | - | - | - |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 | DO-214AB, SMC | TO-220-2 | DO-201AD, Axial | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Supplier Device Package | TO-220-2 | SMC | TO-220AC | DO-201AD | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C | 175°C (Max) | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
