MUR260
  • Share:

onsemi MUR260

Manufacturer No:
MUR260
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MUR260 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 2A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.35 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
73

Please send RFQ , we will respond immediately.

Similar Products

Part Number MUR260 MUR260G   MUR160   MUR210   MUR220   MUR240  
Manufacturer onsemi onsemi Diodes Incorporated onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 2A 2A 1A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 2 A 1.35 V @ 2 A 1.25 V @ 1 A 940 mV @ 2 A 950 mV @ 2 A 1.3 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 50 ns 30 ns 35 ns 65 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - 27pF @ 4V, 1MHz - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial DO-41 Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

CUHS20F40,H3F
CUHS20F40,H3F
Toshiba Semiconductor and Storage
SCHOTTKY BARRIER DIODE, 40V/2A,
VS-15ETH06-M3
VS-15ETH06-M3
Vishay General Semiconductor - Diodes Division
DIODE FRED 600V 15A TO220AC
UF5407
UF5407
NTE Electronics, Inc
R-800V 3A ULTRA FAST
STTH208
STTH208
STMicroelectronics
DIODE GEN PURP 800V 2A DO15
SK310HE3-TP
SK310HE3-TP
Micro Commercial Co
SCHOTTKY BARRIER RECTIFIERS 100V
ES2LDH
ES2LDH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
AS3PJHM3_A/I
AS3PJHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2.1A TO277A
HSM5100J/TR13
HSM5100J/TR13
Microchip Technology
DIODE SCHOTTKY 100V 5A DO214AB
SRL1G-AQ
SRL1G-AQ
Diotec Semiconductor
ST Rect, 400V, 1A
1N2437R
1N2437R
Solid State Inc.
DO8 150 AMP SILICON RECTIFIER
8EWS12S
8EWS12S
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A DPAK
SR1203 A0G
SR1203 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 12A DO201AD

Related Product By Brand

1N6380RL4
1N6380RL4
onsemi
TVS DIODE 36VWM 65.2VC AXIAL
FFSH5065A
FFSH5065A
onsemi
SIC DIODE, 650V, 50A, TO-247-2
SZMM3Z5V6ST1G
SZMM3Z5V6ST1G
onsemi
DIODE ZENER 5.6V 300MW SOD323
NVMFD5877NLWFT3G
NVMFD5877NLWFT3G
onsemi
MOSFET 2N-CH 60V 6A SO8FL
FDY302NZ
FDY302NZ
onsemi
MOSFET N-CH 20V 600MA SC89-3
NCS2002SN1T1G
NCS2002SN1T1G
onsemi
IC OPAMP GP 1 CIRCUIT 6TSOP
74ABT541CSC
74ABT541CSC
onsemi
IC BUF NON-INVERT 5.5V 20SOIC
DM74AS245WMX
DM74AS245WMX
onsemi
IC TXRX NON-INVERT 5.5V 20SOIC
MC10H107FNR2G
MC10H107FNR2G
onsemi
IC 2INPUT OR/NOR TRIPLE 20PLCC
NCV70521MN003G
NCV70521MN003G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP380LSNAJAAT1G
NCP380LSNAJAAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 6TSOP
CAT1320WI28
CAT1320WI28
onsemi
IC SUPERVISOR 1 CHANNEL 8SOIC