MUR210RLG
  • Share:

onsemi MUR210RLG

Manufacturer No:
MUR210RLG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
MUR210RLG Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 2A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:940 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:2 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.46
1,868

Please send RFQ , we will respond immediately.

Similar Products

Part Number MUR210RLG MUR240RLG   MUR260RLG   MUR220RLG   MUR410RLG   MUR210RL  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 400 V 600 V 200 V 100 V 100 V
Current - Average Rectified (Io) 2A 2A 2A 2A 4A 2A
Voltage - Forward (Vf) (Max) @ If 940 mV @ 2 A 1.3 V @ 2 A 1.35 V @ 2 A 950 mV @ 2 A 890 mV @ 4 A 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 65 ns 75 ns 35 ns 35 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 100 V 5 µA @ 400 V 5 µA @ 600 V 2 µA @ 200 V 5 µA @ 100 V 2 µA @ 100 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-201AA, DO-27, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial Axial Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

RB551V-30-AU_R1_000A1
RB551V-30-AU_R1_000A1
Panjit International Inc.
SOD-323, SKY
MURS480ET3G
MURS480ET3G
onsemi
DIODE GEN PURP 800V 4A SMC
PMEG060T060CLPEZ
PMEG060T060CLPEZ
Nexperia USA Inc.
PMEG060T060CLPE/SOT1289B/CFP15
US1ME-TP
US1ME-TP
Micro Commercial Co
DIODE GEN PURP 1KV 1A SMAE
SF68GH
SF68GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
B280-13
B280-13
Diodes Incorporated
DIODE SCHOTTKY 80V 2A SMB
RGP02-12EHE3/73
RGP02-12EHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 500MA DO204
EGL41CHE3/97
EGL41CHE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO213AB
SBLF10L30-E3/45
SBLF10L30-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 10A ITO220AC
SS24SHE3J_A/H
SS24SHE3J_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 2A DO214AC
1N4006GHB0G
1N4006GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
RB510SM-40T2R
RB510SM-40T2R
Rohm Semiconductor
RB510SM-40 IS LOW VF

Related Product By Brand

FS8G
FS8G
onsemi
DIODE GEN PURP 400V 8A TO277-3
SS3003CH-TL-E
SS3003CH-TL-E
onsemi
DIODE SCHOTTKY 30V 3A 6CPH
MMSZ4706T1G
MMSZ4706T1G
onsemi
DIODE ZENER 19V 500MW SOD123
KSC1845UBU
KSC1845UBU
onsemi
TRANS NPN 120V 0.05A TO92-3
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
N57M5114VP2D10TG
N57M5114VP2D10TG
onsemi
IC DGTL POT 10KOHM 32TAP 8TDFN
NL17SZ125XV5T2G
NL17SZ125XV5T2G
onsemi
IC BUF NON-INVERT 5.5V SOT553
MC74HCT32ADR2
MC74HCT32ADR2
onsemi
IC GATE XNOR 4CH 2-INP 14SOIC
MC74VHCT132AMG
MC74VHCT132AMG
onsemi
IC GATE NAND 4CH 2-INP SOEIAJ
CAT25010VE-GT3
CAT25010VE-GT3
onsemi
IC EEPROM 1KBIT SPI 10MHZ 8SOIC
LP2951CDR2
LP2951CDR2
onsemi
IC REG LDO 100MA 5V/ADJ 8SOIC
NCV4949PDR2G
NCV4949PDR2G
onsemi
IC REG LINEAR 5V 100MA 8SOIC