MTW32N20E
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onsemi MTW32N20E

Manufacturer No:
MTW32N20E
Manufacturer:
onsemi
Package:
Tube
Datasheet:
MTW32N20E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 32A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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Similar Products

Part Number MTW32N20E MTW32N20EG   MTV32N20E  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 200 V 200 V -
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 75mOhm @ 16A, 10V 75mOhm @ 16A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 25 V 5000 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 180W (Tc) 180W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Supplier Device Package TO-247 TO-247 -
Package / Case TO-247-3 TO-247-3 -

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