MTD6N20ET4G
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onsemi MTD6N20ET4G

Manufacturer No:
MTD6N20ET4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
MTD6N20ET4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 6A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.75W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number MTD6N20ET4G MTD6N20ET5G   MTD6N20ET4  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 700mOhm @ 3A, 10V 700mOhm @ 3A, 10V 700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V 480 pF @ 25 V 480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.75W (Ta), 50W (Tc) 1.75W (Ta), 50W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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