MTB50P03HDLT4
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onsemi MTB50P03HDLT4

Manufacturer No:
MTB50P03HDLT4
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Datasheet:
MTB50P03HDLT4 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 50A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:4900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number MTB50P03HDLT4 MTB50P03HDLT4G  
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 5V
Rds On (Max) @ Id, Vgs 25mOhm @ 25A, 5V 25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 5 V 100 nC @ 5 V
Vgs (Max) - ±15V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V 4900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 2.5W (Ta), 125W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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