onsemi-MSD601-RT1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MSD601-RT1	MSD601-RT1G	MSD601-RT2	MSD601-ST1
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Active	Obsolete
Transistor Type	NPN	NPN	-	NPN
Current - Collector (Ic) (Max)	100 mA	100 mA	-	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	-	50 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 100mA	500mV @ 10mA, 100mA	-	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA	100nA	-	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	210 @ 2mA, 10V	210 @ 2mA, 10V	-	290 @ 2mA, 10V
Power - Max	200 mW	200 mW	-	200 mW
Frequency - Transition	-	-	-	-
Operating Temperature	150°C (TJ)	-	-	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	-	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	-	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59	SC-59	-	SC-59

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	210 @ 2mA, 10V
Power - Max:	200 mW
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59

onsemi MSD601-RT1