MR856G
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onsemi MR856G

Manufacturer No:
MR856G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MR856G Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number MR856G MR756G   MR851G   MR852G   MR854G   MR856  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 6A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A 900 mV @ 6 A 1.25 V @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns - 300 ns 300 ns 300 ns 300 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 25 µA @ 600 V 10 µA @ 100 V 10 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial Button, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Microde Button Axial Axial Axial Axial
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

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