MR856G
  • Share:

onsemi MR856G

Manufacturer No:
MR856G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MR856G Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

$0.09
4,653

Please send RFQ , we will respond immediately.

Similar Products

Part Number MR856G MR756G   MR851G   MR852G   MR854G   MR856  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 6A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A 900 mV @ 6 A 1.25 V @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns - 300 ns 300 ns 300 ns 300 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 25 µA @ 600 V 10 µA @ 100 V 10 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial Button, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Microde Button Axial Axial Axial Axial
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

Related Product By Categories

ACURN102-HF
ACURN102-HF
Comchip Technology
DIODE GEN PURP 400V 1A 1206
BYC10D-600,127
BYC10D-600,127
NXP USA Inc.
NOW WEEN - BYC10D-600 - HYPERFAS
SK54-AU_R1_000A1
SK54-AU_R1_000A1
Panjit International Inc.
SMC, SKY
UF3J_R1_00001
UF3J_R1_00001
Panjit International Inc.
SURFACE MOUNT ULTRA FAST RECTIFI
STPSC8H065B-TR
STPSC8H065B-TR
STMicroelectronics
DIODE SCHOTTKY 650V 8A DPAK
STPS2200UF
STPS2200UF
STMicroelectronics
DIODE SCHOTTKY 200V 2A SMBFLAT
STPS340UY
STPS340UY
STMicroelectronics
DIODE SCHOTTKY 40V 3A SMB
FRS1MEQ-7
FRS1MEQ-7
Diodes Incorporated
RAPID GPP RECTIFIER DO-219AA T&R
BYG24G-M3/TR3
BYG24G-M3/TR3
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A
VS-12TQ035STRLHM3
VS-12TQ035STRLHM3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 15A D2PAK
HS2M-F1-0000HF
HS2M-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 2A DO214AA
SR305 B0G
SR305 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 3A DO201AD

Related Product By Brand

P6SMB62AT3G
P6SMB62AT3G
onsemi
TVS DIODE 53VWM 85VC 425-TEPBGA
NCP345SNT1
NCP345SNT1
onsemi
IC OVERVOLT PROT CTRLR 5TSOP
SBAV70WT1
SBAV70WT1
onsemi
DIODE ARRAY GP 100V 200MA SC70-3
BZX84C6V8_S00Z
BZX84C6V8_S00Z
onsemi
DIODE ZENER 6.9V 550MW SOT23-3
BC558CZL1
BC558CZL1
onsemi
TRANS PNP 30V 0.1A TO92
2SC3646S-P-TD-E
2SC3646S-P-TD-E
onsemi
TRANS NPN 100V 1A
EMH2604-TL-H
EMH2604-TL-H
onsemi
MOSFET N/P-CH 20V 4A/3A EMH8
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
MMFT2406T1
MMFT2406T1
onsemi
MOSFET N-CH 240V 700MA SOT223
NGTB30N60IHLWG
NGTB30N60IHLWG
onsemi
IGBT 600V 30A TO247
MC74HC74ADTR2
MC74HC74ADTR2
onsemi
IC FF D-TYPE DUAL 1BIT 14TSSOP
MC74LCX158D
MC74LCX158D
onsemi
IC MULTIPLEXER 4 X 2:1 16SOIC