MR851G
  • Share:

onsemi MR851G

Manufacturer No:
MR851G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MR851G Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 3A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:10 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

-
434

Please send RFQ , we will respond immediately.

Similar Products

Part Number MR851G MR854G   MR852G   MR856G   MR751G   MR851  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 400 V 200 V 600 V 100 V 100 V
Current - Average Rectified (Io) 3A 3A 3A 3A 6A 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 900 mV @ 6 A 1.25 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns 300 ns 300 ns 300 ns - 300 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V 10 µA @ 400 V 10 µA @ 200 V 10 µA @ 600 V 25 µA @ 100 V 10 µA @ 100 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial Button, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial Axial Axial Microde Button Axial
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 125°C

Related Product By Categories

S3KB-13-F
S3KB-13-F
Diodes Incorporated
DIODE GEN PURP 800V 3A SMB
CDBB260-HF
CDBB260-HF
Comchip Technology
DIODE SCHOTTKY 60V 2A DO214AA
STTH30L06WY
STTH30L06WY
STMicroelectronics
DIODE GEN PURP 600V 30A DO247
BA159-E3/54
BA159-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BYC58X-600,127
BYC58X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220FP
VS-1N3893R
VS-1N3893R
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 12A DO203AA
GI914-E3/54
GI914-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO201AD
RS1PG-E3/84A
RS1PG-E3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO220AA
RGP10BEHE3/53
RGP10BEHE3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
RS1DL MHG
RS1DL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
ES1FL RTG
ES1FL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
SFT17G A0G
SFT17G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A TS-1

Related Product By Brand

GBPC2508
GBPC2508
onsemi
BRIDGE RECT 1PHASE 800V 25A GBPC
BC857CDW1T1
BC857CDW1T1
onsemi
TRANS 2PNP 45V 0.1A SOT363
MPSA12RLRA
MPSA12RLRA
onsemi
TRANS NPN DARL 20V TO92
FQB13N10LTM
FQB13N10LTM
onsemi
MOSFET N-CH 100V 12.8A D2PAK
NVD5863NLT4G-VF01
NVD5863NLT4G-VF01
onsemi
MOSFET N-CH 60V 14.9A/82A DPAK
NLU2G06BMX1TCG
NLU2G06BMX1TCG
onsemi
IC INVERTER OD 2CH 2-INP 6ULLGA
MC100E142FNR2
MC100E142FNR2
onsemi
IC REGISTER SHFT 9BIT ECL 28PLCC
NUD3105DMT1
NUD3105DMT1
onsemi
IC PWR DRIVER N-CHANNEL 1:1 SC74
CS5124XD8G
CS5124XD8G
onsemi
IC REG CTRLR MULT TOPOLOGY 8SOIC
MC33275DT-3.0RKG
MC33275DT-3.0RKG
onsemi
IC REG LINEAR 3V 300MA DPAK
NCP502SQ31T2G
NCP502SQ31T2G
onsemi
IC REG LINEAR 3.1V 80MA SC88A
HCPL4503SDVM
HCPL4503SDVM
onsemi
OPTOISO 5KV TRANS W/BASE 8SMD