MR754G
  • Share:

onsemi MR754G

Manufacturer No:
MR754G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MR754G Datasheet
ECAD Model:
-
Description:
DIODE GP 400V 6A MICRODE BUTTON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 6 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:25 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:Button, Axial
Supplier Device Package:Microde Button
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
70

Please send RFQ , we will respond immediately.

Similar Products

Part Number MR754G MR854G   MR756G   MR750G   MR751G   MR752G   MR754  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 50 V 100 V 200 V 400 V
Current - Average Rectified (Io) 6A 3A 6A 6A 6A 6A 6A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 6 A 1.25 V @ 3 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 300 ns - - - - -
Current - Reverse Leakage @ Vr 25 µA @ 400 V 10 µA @ 400 V 25 µA @ 600 V 25 µA @ 50 V 25 µA @ 100 V 25 µA @ 200 V 25 µA @ 400 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole -
Package / Case Button, Axial DO-201AA, DO-27, Axial Button, Axial Button, Axial Button, Axial Button, Axial -
Supplier Device Package Microde Button Axial Microde Button Microde Button Microde Button Microde Button -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54M3T5G
BAT54M3T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOT723
BY254P-E3/54
BY254P-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO201AD
PG201R_R2_00001
PG201R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
STPS2L30AFN
STPS2L30AFN
STMicroelectronics
30 V, 2 A LOW DROP POWER SCHOTTK
V30120SG-M3/4W
V30120SG-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 120V TO-220AB
VS-10ETF12STRL-M3
VS-10ETF12STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 10A D2PAK
G3S17010A
G3S17010A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 10A 2-P
SS23HE3/5BT
SS23HE3/5BT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 2A DO214AA
DSR6V600P5-13
DSR6V600P5-13
Diodes Incorporated
DIODE GEN PURP 600V 6A POWERDI5
PR1505S-A
PR1505S-A
Diodes Incorporated
DIODE GEN PURP 600V 1.5A DO41
D1481N62TXPSA1
D1481N62TXPSA1
Infineon Technologies
DIODE GEN PURP 6.2KV 2200A
RB521CS-30T2R
RB521CS-30T2R
Rohm Semiconductor
DIODE SCHOTTKY 30V 100MA VMN2

Related Product By Brand

DF06S1
DF06S1
onsemi
BRIDGE RECT 1PHASE 600V 1A 4SDIP
FSV15100V
FSV15100V
onsemi
DIODE SCHOTTKY 100V 15A TO277-3
NTS12100EMFST3G
NTS12100EMFST3G
onsemi
DIODE SCHOTTKY 100V 12A 5DFN
BZX79C15-T50A
BZX79C15-T50A
onsemi
DIODE ZENER 15V 500MW DO35
SMMSZ4704T1G
SMMSZ4704T1G
onsemi
DIODE ZENER 17V 500MW SOD123
MM3Z9V1T3G
MM3Z9V1T3G
onsemi
DIODE ZENER 9.1V 300MW SOD323
MSD1328-ST1G
MSD1328-ST1G
onsemi
TRANS NPN 20V 0.5A SC59
NVMFS5832NLT3G
NVMFS5832NLT3G
onsemi
MOSFET N-CH 40V 21A 5DFN
MC100LVEL11DTR2
MC100LVEL11DTR2
onsemi
IC CLOCK BUFFER 1:2 1GHZ 8-TSSOP
SN74LS27M
SN74LS27M
onsemi
NOR GATE
MC74VHC04DTR2
MC74VHC04DTR2
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCV8164CSNADJT1G
NCV8164CSNADJT1G
onsemi
IC REG LIN POS ADJ 300MA 5TSOP