MR754G
  • Share:

onsemi MR754G

Manufacturer No:
MR754G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MR754G Datasheet
ECAD Model:
-
Description:
DIODE GP 400V 6A MICRODE BUTTON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 6 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:25 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:Button, Axial
Supplier Device Package:Microde Button
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
70

Please send RFQ , we will respond immediately.

Similar Products

Part Number MR754G MR854G   MR756G   MR750G   MR751G   MR752G   MR754  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 50 V 100 V 200 V 400 V
Current - Average Rectified (Io) 6A 3A 6A 6A 6A 6A 6A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 6 A 1.25 V @ 3 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 300 ns - - - - -
Current - Reverse Leakage @ Vr 25 µA @ 400 V 10 µA @ 400 V 25 µA @ 600 V 25 µA @ 50 V 25 µA @ 100 V 25 µA @ 200 V 25 µA @ 400 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole -
Package / Case Button, Axial DO-201AA, DO-27, Axial Button, Axial Button, Axial Button, Axial Button, Axial -
Supplier Device Package Microde Button Axial Microde Button Microde Button Microde Button Microde Button -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS140Z
STPS140Z
STMicroelectronics
DIODE SCHOTTKY 40V 1A SOD123
SS2FH10-M3/H
SS2FH10-M3/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 2A DO-219AB
HS1D
HS1D
SURGE
1A -200V - SMA (DO-214AC) - RECT
APT30D100BG
APT30D100BG
Microchip Technology
DIODE GEN PURP 1KV 30A TO247
IMBD4448-G3-08
IMBD4448-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
SSB43LHE3_A/H
SSB43LHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 4A DO214AA
SF2004PTH
SF2004PTH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 20A TO247AD
123NQ100
123NQ100
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 120A D-67
RU 2CV1
RU 2CV1
Sanken
DIODE GEN PURP 1KV 800MA AXIAL
ES1GLHRQG
ES1GLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
SFAF1606G
SFAF1606G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A ITO220AC
RB510VM-40FHTE-17
RB510VM-40FHTE-17
Rohm Semiconductor
RB510VM-40FH IS LOW V F

Related Product By Brand

P6SMB43AT3
P6SMB43AT3
onsemi
TVS ZENER UNIDIR 600W 43V SMB
1SMA10CAT3
1SMA10CAT3
onsemi
TVS DIODE 10VWM 17VC SMA
NSBC114EPDP6T5G
NSBC114EPDP6T5G
onsemi
TRANS PREBIAS NPN/PNP 50V SOT963
MJE18004D2G
MJE18004D2G
onsemi
TRANS NPN 450V 5A TO220
HUF76429S3ST
HUF76429S3ST
onsemi
MOSFET N-CH 60V 47A D2PAK
NCV7703BD2R2G
NCV7703BD2R2G
onsemi
IC DVR HALF BRIDGE TRPL 14SOIC
TY40497SDWR2G
TY40497SDWR2G
onsemi
ANA SMARTCARD PWR MGMT
CAT8900B120TBGT3
CAT8900B120TBGT3
onsemi
IC VREF SERIES 0.08% SOT23-3
NCV8501D33
NCV8501D33
onsemi
IC REG LINEAR 3.3V 150MA 8SOIC
H11AV2FVM
H11AV2FVM
onsemi
OPTOISO 7.5KV TRANS W/BASE 6SMD
MOC3012SR2VM
MOC3012SR2VM
onsemi
OPTOISOLATOR 4.17KV TRIAC 6SMD
AR0144CSSM00SUKA0-CRBR
AR0144CSSM00SUKA0-CRBR
onsemi
IMAGE SENSOR CMOS ODCSP-69