onsemi-MPSA56G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MPSA56G	MPSA55G	MPSA56
Manufacturer	onsemi	onsemi	NTE Electronics, Inc
Product Status	Obsolete	Obsolete	Active
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA
Voltage - Collector Emitter Breakdown (Max)	80 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	250mV @ 10mA, 100mA	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	50 @ 10mA, 1V
Power - Max	625 mW	625 mW	625 mW
Frequency - Transition	50MHz	50MHz	50MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92 (TO-226)	TO-92 (TO-226)	TO-92

onsemi MPSA56G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)