onsemi-MPSA55_D26Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MPSA55_D26Z	MPSA55_D27Z	MPSA56_D26Z	MPSA65_D26Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	PNP	PNP - Darlington
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA	1.2 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	80 V	30 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	250mV @ 10mA, 100mA	200mV @ 10mA, 100mA	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V	20000 @ 100mA, 5V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	50MHz	50MHz	50MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi MPSA55_D26Z

Transistor Type:	PNP
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3