onsemi-MPSA20_D27Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MPSA20_D27Z	MPSA28_D27Z	MPSA29_D27Z	MPSA20_D26Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN - Darlington	NPN - Darlington	NPN
Current - Collector (Ic) (Max)	100 mA	800 mA	800 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	80 V	100 V	40 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA	1.5V @ 100µA, 100mA	1.5V @ 100µA, 100mA	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)	500nA	500nA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 5mA, 10V	10000 @ 100mA, 5V	10000 @ 100mA, 5V	40 @ 5mA, 10V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	125MHz	125MHz	125MHz	125MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi MPSA20_D27Z

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 5mA, 10V
Power - Max:	625 mW
Frequency - Transition:	125MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3