onsemi-MPS6651 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MPS6651	MPS6651G	MPS651	MPS6601
Manufacturer	onsemi	onsemi	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	800 mA	1 A
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V	60 V	25 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	500mV @ 200mA, 2A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA (ICBO)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 1V	50 @ 500mA, 1V	75 @ 1A, 2V	50 @ 500mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	100MHz	75MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92 (TO-226)	TO-92 (TO-226)	TO-92-3	TO-92 (TO-226)

onsemi MPS6651

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)