onsemi-MPS6601G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MPS6601G	MPS6602G	MPS6651G	MPS6601
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	25 V	40 V	25 V	25 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 1V	50 @ 500mA, 1V	50 @ 500mA, 1V	50 @ 500mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	100MHz	100MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92 (TO-226)	TO-92 (TO-226)	TO-92 (TO-226)	TO-92 (TO-226)

onsemi MPS6601G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)