MMSF7P03HDR2
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onsemi MMSF7P03HDR2

Manufacturer No:
MMSF7P03HDR2
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
MMSF7P03HDR2 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 7A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75.8 nC @ 6 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

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Similar Products

Part Number MMSF7P03HDR2 MMSF7P03HDR2G   MMSF7N03HDR2  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
FET Type P-Channel P-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V 30 V -
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 35mOhm @ 5.3A, 10V 35mOhm @ 5.3A, 10V -
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 75.8 nC @ 6 V 75.8 nC @ 6 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 24 V 1680 pF @ 24 V -
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package 8-SOIC 8-SOIC -
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) -

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