onsemi-MMFT2N02ELT1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	150mOhm @ 800mA, 5V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 5 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	580 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223 (TO-261)
Package / Case:	TO-261-4, TO-261AA

onsemi MMFT2N02ELT1