onsemi-MMFT107T1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	60 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223 (TO-261)
Package / Case:	TO-261-4, TO-261AA

onsemi MMFT107T1