onsemi-MMBT5770 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	600MHz
Noise Figure (dB Typ @ f):	-
Gain:	-
Power - Max:	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 3mA, 1V
Current - Collector (Ic) (Max):	10mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

onsemi MMBT5770