onsemi-MJE800 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE800	MJE802	MJE803	MJE800G	MJE200	MJE700
Manufacturer	onsemi	STMicroelectronics	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN	PNP - Darlington
Current - Collector (Ic) (Max)	4 A	4 A	4 A	4 A	5 A	4 A
Voltage - Collector Emitter Breakdown (Max)	60 V	80 V	80 V	60 V	40 V	60 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A	3V @ 40mA, 4A	2.8V @ 40mA, 2A	2.5V @ 30mA, 1.5A	1.8V @ 1A, 5A	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	100µA	100nA	100µA	100µA	-	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V	750 @ 1.5A, 3V	750 @ 2A, 3V	750 @ 1.5A, 3V	45 @ 2A, 1V	750 @ 1.5A, 3V
Power - Max	40 W	40 W	40 W	40 W	15 W	40 W
Frequency - Transition	-	-	-	-	65MHz	-
Operating Temperature	-	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	SOT-32	TO-126	TO-126	TO-126	TO-126

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40 W
Frequency - Transition:	-
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126

onsemi MJE800