MJE5740G
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onsemi MJE5740G

Manufacturer No:
MJE5740G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MJE5740G Datasheet
ECAD Model:
-
Description:
POWER BIPOLAR TRANSISTOR NPN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

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80

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Similar Products

Part Number MJE5740G MJE5742G   MJE5730G  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type - NPN - Darlington PNP
Current - Collector (Ic) (Max) - 8 A 1 A
Voltage - Collector Emitter Breakdown (Max) - 400 V 300 V
Vce Saturation (Max) @ Ib, Ic - 3V @ 400mA, 8A 1V @ 200mA, 1A
Current - Collector Cutoff (Max) - - 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce - 200 @ 2A, 5V 30 @ 300mA, 10V
Power - Max - 2 W 40 W
Frequency - Transition - - 10MHz
Operating Temperature - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type - Through Hole Through Hole
Package / Case - TO-220-3 TO-220-3
Supplier Device Package - TO-220 TO-220

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