onsemi-MJE5731G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE5731G	MJE5730G	MJE5731	MJE5731A	MJE5731AG
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Obsolete	Obsolete	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	350 V	300 V	350 V	375 V	375 V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A	1V @ 200mA, 1A	1V @ 200mA, 1A	1V @ 200mA, 1A	1V @ 200mA, 1A
Current - Collector Cutoff (Max)	1mA	1mA	1mA	1mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V	30 @ 300mA, 10V	30 @ 300mA, 10V	30 @ 300mA, 10V	30 @ 300mA, 10V
Power - Max	40 W	40 W	40 W	40 W	40 W
Frequency - Transition	10MHz	10MHz	10MHz	10MHz	10MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220

onsemi MJE5731G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 1A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 300mA, 10V
Power - Max:	40 W
Frequency - Transition:	10MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220