onsemi-MJE5730G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE5730G	MJE5731G	MJE5740G	MJE5730
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Obsolete
Transistor Type	PNP	PNP	-	PNP
Current - Collector (Ic) (Max)	1 A	1 A	-	1 A
Voltage - Collector Emitter Breakdown (Max)	300 V	350 V	-	300 V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A	1V @ 200mA, 1A	-	1V @ 200mA, 1A
Current - Collector Cutoff (Max)	1mA	1mA	-	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V	30 @ 300mA, 10V	-	30 @ 300mA, 10V
Power - Max	40 W	40 W	-	40 W
Frequency - Transition	10MHz	10MHz	-	10MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	-	Through Hole
Package / Case	TO-220-3	TO-220-3	-	TO-220-3
Supplier Device Package	TO-220	TO-220	-	TO-220

onsemi MJE5730G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	300 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 1A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 300mA, 10V
Power - Max:	40 W
Frequency - Transition:	10MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220