onsemi-MJE271G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE271G	MJE371G	MJE171G	MJE270G	MJE271
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active	Obsolete
Transistor Type	PNP - Darlington	PNP	PNP	NPN - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	2 A	4 A	3 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	40 V	60 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 1.2mA, 120mA	-	1.7V @ 600mA, 3A	3V @ 1.2mA, 120mA	3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max)	1mA	100µA (ICBO)	100nA (ICBO)	1mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1500 @ 120mA, 10V	40 @ 1A, 1V	50 @ 100mA, 1V	1500 @ 120mA, 10V	1500 @ 120mA, 10V
Power - Max	1.5 W	40 W	1.5 W	1.5 W	1.5 W
Frequency - Transition	6MHz	-	50MHz	6MHz	6MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126	TO-126	TO-126

onsemi MJE271G

Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1500 @ 120mA, 10V
Power - Max:	1.5 W
Frequency - Transition:	6MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126