onsemi-MJE243G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE243G	MJE253G	MJE243
Manufacturer	onsemi	onsemi	onsemi
Product Status	Active	Active	Obsolete
Transistor Type	NPN	PNP	NPN
Current - Collector (Ic) (Max)	4 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	300mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V	40 @ 200mA, 1V	40 @ 200mA, 1V
Power - Max	1.5 W	1.5 W	15 W
Frequency - Transition	40MHz	40MHz	40MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126

onsemi MJE243G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 200mA, 1V
Power - Max:	1.5 W
Frequency - Transition:	40MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126