onsemi-MJE200G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE200G	MJE210G	MJE270G	MJE700G	MJE800G	MJE200
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	PNP	NPN - Darlington	PNP - Darlington	NPN - Darlington	NPN
Current - Collector (Ic) (Max)	5 A	5 A	2 A	4 A	4 A	5 A
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	100 V	60 V	60 V	40 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A	1.8V @ 1A, 5A	3V @ 1.2mA, 120mA	2.5V @ 30mA, 1.5A	2.5V @ 30mA, 1.5A	1.8V @ 1A, 5A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	1mA	100µA	100µA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V	45 @ 2A, 1V	1500 @ 120mA, 10V	750 @ 1.5A, 3V	750 @ 1.5A, 3V	45 @ 2A, 1V
Power - Max	15 W	15 W	1.5 W	40 W	40 W	15 W
Frequency - Transition	65MHz	65MHz	6MHz	-	-	65MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126

onsemi MJE200G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1A, 5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	45 @ 2A, 1V
Power - Max:	15 W
Frequency - Transition:	65MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126