onsemi-MJE200 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE200	MJE200G	MJE210	MJE270	MJE800	MJE700
Manufacturer	onsemi	onsemi	STMicroelectronics	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	PNP	NPN - Darlington	NPN - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	5 A	5 A	5 A	2 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	25 V	100 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A	1.8V @ 1A, 5A	1.8V @ 1A, 5A	3V @ 1.2mA, 120mA	2.5V @ 30mA, 1.5A	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	-	100nA (ICBO)	100nA (ICBO)	1mA	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V	45 @ 2A, 1V	45 @ 2A, 1V	1500 @ 120mA, 10V	750 @ 1.5A, 3V	750 @ 1.5A, 3V
Power - Max	15 W	15 W	1.5 W	1.5 W	40 W	40 W
Frequency - Transition	65MHz	65MHz	65MHz	6MHz	-	-
Operating Temperature	-	-65°C ~ 150°C (TJ)	150°C (TJ)	-65°C ~ 150°C (TJ)	-	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	SOT-32-3	TO-126	TO-126	TO-126

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1A, 5A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	45 @ 2A, 1V
Power - Max:	15 W
Frequency - Transition:	65MHz
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126

onsemi MJE200