MJE182G
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onsemi MJE182G

Manufacturer No:
MJE182G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MJE182G Datasheet
ECAD Model:
-
Description:
TRANS NPN 80V 3A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number MJE182G MJE172G   MJE180G   MJE181G   MJE182  
Manufacturer onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 1.5 W 1.5 W 1.5 W 1.5 W 12.5 W
Frequency - Transition 50MHz 50MHz 50MHz 50MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 SOT-32-3

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