onsemi-MJE180PWD - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 100mA, 1V
Power - Max:	1.5 W
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126

onsemi MJE180PWD