onsemi-MJE18006G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE18006G	MJE18008G	MJE18002G	MJE18004G	MJE18006
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Obsolete	Active	Obsolete
Transistor Type	NPN	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	6 A	8 A	2 A	5 A	6 A
Voltage - Collector Emitter Breakdown (Max)	450 V	450 V	450 V	450 V	450 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 600mA, 3A	700mV @ 900mA, 4.5V	500mV @ 200mA, 1A	750mV @ 500mA, 2.5A	700mV @ 600mA, 3A
Current - Collector Cutoff (Max)	100µA	100µA	100µA	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	6 @ 3A, 1V	14 @ 1A, 5V	14 @ 200mA, 5V	14 @ 300mA, 5V	6 @ 3A, 1V
Power - Max	100 W	125 W	50 W	75 W	100 W
Frequency - Transition	14MHz	13MHz	13MHz	13MHz	14MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220

onsemi MJE18006G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	6 A
Voltage - Collector Emitter Breakdown (Max):	450 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 600mA, 3A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	6 @ 3A, 1V
Power - Max:	100 W
Frequency - Transition:	14MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220