onsemi-MJE18002 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE18002	MJE18008	MJE18004	MJE18002G	MJE18006
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2 A	8 A	5 A	2 A	6 A
Voltage - Collector Emitter Breakdown (Max)	450 V	450 V	450 V	450 V	450 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 1A	700mV @ 900mA, 4.5V	750mV @ 500mA, 2.5A	500mV @ 200mA, 1A	700mV @ 600mA, 3A
Current - Collector Cutoff (Max)	100µA	100µA	100µA	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 200mA, 5V	14 @ 1A, 5V	14 @ 300mA, 5V	14 @ 200mA, 5V	6 @ 3A, 1V
Power - Max	50 W	125 W	75 W	50 W	100 W
Frequency - Transition	13MHz	13MHz	13MHz	13MHz	14MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220

onsemi MJE18002

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	450 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	14 @ 200mA, 5V
Power - Max:	50 W
Frequency - Transition:	13MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220