MJE170G
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onsemi MJE170G

Manufacturer No:
MJE170G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MJE170G Datasheet
ECAD Model:
-
Description:
TRANS PNP 40V 3A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number MJE170G MJE172G   MJE270G   MJE171G   MJE180G   MJE170  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Transistor Type PNP PNP NPN - Darlington PNP NPN PNP
Current - Collector (Ic) (Max) 3 A 3 A 2 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 80 V 100 V 60 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 3V @ 1.2mA, 120mA 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 1mA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V 1500 @ 120mA, 10V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 12.5 W
Frequency - Transition 50MHz 50MHz 6MHz 50MHz 50MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126

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