onsemi-MJE170 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE170	MJE170G	MJE180	MJE172	MJE270	MJE171
Manufacturer	onsemi	onsemi	NTE Electronics, Inc	NTE Electronics, Inc	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active	Obsolete	Obsolete
Transistor Type	PNP	PNP	NPN	PNP	NPN - Darlington	PNP
Current - Collector (Ic) (Max)	3 A	3 A	3 A	3 A	2 A	3 A
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V	80 V	100 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.7V @ 600mA, 3A	1.7V @ 600mA, 3A	300mV @ 50mA, 500mA	1.7V @ 600mA, 3A	3V @ 1.2mA, 120mA	1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	-	100nA (ICBO)	1mA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	50 @ 100mA, 1V	50 @ 100mA, 1V	50 @ 100mA, 1V	1500 @ 120mA, 10V	50 @ 100mA, 1V
Power - Max	12.5 W	1.5 W	12.5 W	1.5 W	1.5 W	12.5 W
Frequency - Transition	50MHz	50MHz	50MHz	50MHz	6MHz	50MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126

onsemi MJE170

Transistor Type:	PNP
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 100mA, 1V
Power - Max:	12.5 W
Frequency - Transition:	50MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126